Researcher
Marc Heyns
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → Today - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 31 Jul 2020 - Department of Materials Engineering (Department)
Member
From1 Oct 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2005 → 30 Sep 2007
Projects
1 - 10 of 28
- OPERANDO: In-situ observations of the dynamic processes inside the atomic resolution transmission electron microscopeFrom1 May 2020 → TodayFunding: FWO Medium Size Research Infrastructure
- Magnetoacoustic wave devices for ultralow power spintronicsFrom19 Jun 2019 → TodayFunding: FWO Strategic Basic Research Grant
- 2D Materials: Theoretical study of Magnetic and Contact propertiesFrom7 Dec 2018 → 20 Oct 2023Funding: Own budget, for example: patrimony, inscription fees, gifts
- Micromagnetic simulations for boolean and non-boolean logicFrom1 Sep 2018 → 31 Dec 2022Funding: FWO Strategic Basic Research Grant
- Interface Engineering for Performance Enhancement in 2D Field Effect TransistorsFrom3 Aug 2018 → 14 Mar 2024Funding: Own budget, for example: patrimony, inscription fees, gifts
- Understanding Interface Interactions in Graphene-Ruthenium Hybrids for Next Generation InterconnectsFrom6 Nov 2017 → 12 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Design and Characterization of Quantum Sillicon-Based Devices for Semiconducting Qubit Implementation.From1 Oct 2017 → 31 Mar 2022Funding: FWO Strategic Basic Research Grant
- Fundamental challenges for two dimensional semiconductorsFrom1 Oct 2017 → 30 Sep 2021Funding: Fund Recuperation Fiscal Exemption
- Design and Characterization of Quantum Devices for Superconducting Qubit ImplementationFrom20 Sep 2017 → 19 Aug 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs SystemFrom23 Aug 2017 → 11 Jan 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
471 - 480 of 534
- Large-area, catalyst-free heteroepitaxy of InAs nanowires on Si by MOVPE
Authors: Mirco Cantoro, Gang Wang, Han Chung Lin, Alexander Klekachev, Tae-Gon Kim, Marc Heyns, Stefan De Gendt
Pages: 129 - 135 - Submonolayer barium passivation study for germanium(100)/molecular beam epitaxial Al2O3
Authors: Clement Merckling, Marc Heyns
- Growth and integration of high-density CNT for BEOL interconnects
Authors: Ainhoa Romo Negreira, Daire Cott, Anne Verhulst, Santiago Cruz Esconjaurequi, Nicolo' Chiodarelli, Johan Ek Weis, Caroline Whelan, Marc Heyns, Stefan De Gendt, Philippe Vereecken
Pages: 1079 - Comparison of short-channel effects in monolayer MoS2 based junctionless and inversion-mode field-effect transistors
Authors: Tarun Agarwal Kumar, Bart Soree, Iuliana Radu, Praveen Raghavan, Gianluca Fiori, Giuseppe Iannaccone, Aaron Thean, Marc Heyns, Wim Dehaene
Pages: 23506 - Atomic layer deposition of hafnium oxide on Ge and GaAs substrates: precursors and surface preparation
Authors: Annelies Delabie, Wilfried Vandervorst, Marc Heyns
Pages: H937 - H944 - Defect density reduction of the Al2O3/GaAs(001) interface by using H2S molecular beam passivation
Authors: Clement Merckling, Marc Heyns
Pages: 1778 - 1783 - The Importance of Moisture Control for EOT Scaling of Hf-Based Dielectrics
Authors: Annelies Delabie, Stefan De Gendt, Marc Heyns
Pages: H416 - H423 - Germanium for advanced CMOS anno 2009: a SWOT analysis
Authors: Matty Caymax, Geert Eneman, Florence Bellenger, Clement Merckling, Annelies Delabie, Gang Wang, Roger Loo, Eddy Simoen, Jerome Mitard, Brice De Jaeger, et al.
Pages: 461 - 464 - Watermark formation mechanism by evaporation of ultra-pure water: Study the effect of ambient
Authors: Amir Tamaddon, Stefan De Gendt, Marc Heyns
Pages: 183 - 190 - Improving Ion/Ioff in bilayer graphene by molecular functionalization
Authors: Amirhasan Nourbakhsh, Alexander Klekachev, Marc Heyns, Stefan De Gendt
Pages: 83 - 90Number of pages: 8
Patents
1 - 7 of 7
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)
- A bilayer graphene tunneling field effect transistor (Inventor)
- Bilayer graphene tunneling field effect transistor (Inventor)
- Graphene-based semiconductor device (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)