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Patent
Graphene based field effect transistor
A semiconductor device comprising: —� A graphene layer (2), —� A graphene oxide layer (3) overlaying said graphene layer, —� A high-k dielectric layer (8) overlaying said graphene oxide layer as well as a method for producing the same are disclosed.
Patent Publication Number: EP2790227
Year filing: 2019
Year approval: 2019
Year publication: 2019
Status: Assigned
URI: link to Espacenet
Technology domains: Semiconductors
Validated for IOF-key: Yes
Attributed to: Associatie KULeuven