Graphene based field effect transistor

A semiconductor device comprising a graphene layer, a graphene oxide layer overlaying the graphene layer, and a high-k dielectric layer overlaying the graphene oxide layer is provided, as well as a method for producing the same. The method results in a graphene chemical functionalization that efficiently and uniformly seeds ALD growth, preserves the underlying graphene structure, and achieves desirable dielectric properties such as low leakage current and high capacitance.

Patent Publication Number: US9184270

Year filing: 2014

Year approval: 2015

Year publication: 2015

Status: Assigned

Technology domains: Semiconductors

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven