Bilayer graphene tunneling field effect transistor

A bilayer graphene tunnelling field effect transistor is provided comprising a bilayer graphene layer, and at least a top gate electrode and a bottom gate electrode, wherein the at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: a source region, a channel region, and a drain region.

Patent Publication Number: US9293536

Year filing: 2014

Year approval: 2016

Year publication: 2016

Status: Assigned

Technology domains: Semiconductors

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven