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Patent

Graphene-based semiconductor device

A semiconductor device is provided comprising a bilayer graphene comprising a first and a second adjacent graphene layer, and a first electrically insulating layer contacting the first graphene layer, the first electrically insulating layer comprising an electrically insulating material, and a substance suitable for creating free charge carriers of a first type in the first graphene layer, the semiconductor device further comprising an electrically insulating region contacting the second graphene layer and suitable for creating free charge carriers of a second type, opposite to the first type, in the second graphene layer.
Patent Publication Number: US9337273
Year filing: 2013
Year approval: 2016
Year publication: 2016
Status: Assigned
Technology domains: Semiconductors, Micro-structure and nano-technology
Validated for IOF-key: Yes
Attributed to: Associatie KULeuven