< Back to previous page
Researcher
Marc Heyns
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → Today - Surface and Interface Engineered Materials (Division)
Member
From1 Jan 2012 → 31 Jul 2020 - Department of Materials Engineering (Department)
Member
From1 Oct 2007 → 31 Dec 2011 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2005 → 30 Sep 2007
Projects
11 - 20 of 28
- Towards Single-Molecule Sensing with Silicon bioFETs: Modeling and ExperimentsFrom16 Aug 2017 → 21 Dec 2021Funding: Own budget, for example: patrimony, inscription fees, gifts
- Spin- Torque Majority Gate DevicesFrom6 Oct 2016 → 2 Mar 2022Funding: FWO Strategic Basic Research Grant
- Development of Reliable High-k Gate Dielectrics at Reduced Thermal Budget, for Integration on III-V Channels with Limited Thermal Stability and Sequential 3D ProcessingFrom2 Oct 2016 → 13 Jun 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Epitaxy of van der Waals Materials: a Fundamental and Exploratory Study Focused on Molecular Beam Epitaxy of WSe2From22 Sep 2016 → 27 Oct 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Time-Domain Spin-Transfer Torque Induced Magnetic Tunnel Junction Reversal Dynamics - Pathways for Fast Spin-Logic ApplicationsFrom11 Mar 2016 → 25 Oct 2021Funding: Own budget, for example: patrimony, inscription fees, gifts
- Understanding Charge Behaviour in a 2D Transition Metal Dichalcogenide MOS SystemFrom1 Feb 2016 → 7 Jul 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Contact to Semiconducting Transition Metal DichalcogenidesFrom6 Jan 2015 → 5 Feb 2021Funding: Own budget, for example: patrimony, inscription fees, gifts
- Plasmonic Devices Electrically Driven by Tunnel JunctionsFrom30 Sep 2014 → 12 Dec 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
- Device-Circuit Co-Design of 2D Material Based Devices for Future ElectronicsFrom1 May 2014 → 14 Jun 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
- Impact of Emerging Electrical and Optical 3D Integration Technologies on High Bandwidth Interconnect SystemsFrom7 Oct 2013 → 15 Dec 2021Funding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 534
- 2D Materials: Theoretical Study of Magnetic and Contact Properties(2023)
Authors: Peter Reyntjens, Bart Sorée, Marc Heyns
- Unraveling the impact of nano-scaling on silicon field-effect transistors for the detection of single-molecules(2023)
Authors: Marc Heyns, Koen Martens
Pages: 2354 - 2368 - GHz Dynamics of Magnetoelectric Coupling at the Nanoscale(2022)
Authors: Frederic Vanderveken, Bart Sorée, Marc Heyns
- Design and Characterization of Quantum Devices for Superconducting Qubit Implementation(2022)
Authors: Jeroen Verjauw, Marc Heyns
- Path toward manufacturable superconducting qubits with relaxation times exceeding 0.1 ms(2022)
Authors: Jeroen Verjauw, Rohith Acharya, Jacques Van Damme, Marc Heyns
- Lifetime Assessment of InxGa1-xAs n-Type Hetero-Epitaxial Layers(2022)
Authors: Clement Merckling, Marc Heyns
- Spintronic Logic Based on Magnetic Domain Walls(2022)
Authors: Eline Raymenants, Marc Heyns
- Modelling Topological and Magnetic Materials for Charge and Spin-based Devices(2022)
Authors: Sabyasachi Tiwari, Bart Sorée, Kristiaan Temst, Marc Heyns
- Understanding Interface Interactions in Graphene-Ruthenium Hybrids for Next Generation Interconnects(2022)
Authors: Swati Achra, Marc Heyns, Bart Sorée
- Electrical Modelling and Characterization of Extended Defects in n Type InxGa1-xAs System(2022)
Authors: Po-Chun Hsu, Marc Heyns
Patents
1 - 7 of 7
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)
- A bilayer graphene tunneling field effect transistor (Inventor)
- Bilayer graphene tunneling field effect transistor (Inventor)
- Graphene-based semiconductor device (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Graphene based field effect transistor (Inventor)