Tunnel field effect transistor device and method for making the device

A Tunnel Field Effect Transistor device (TFET) made of at least following layers: a highly doped drain layer (6), a highly doped source layer (2), a channel layer (5), a gate dielectric layer (8) and a gate electrode layer (9), the gate dielectric layer (8) extending along the source layer (2), and a highly doped pocket layer (3) extending in between and along the gate dielectric layer (8) and the source layer (2), characterized in that the pocket layer (3) extends to between and along the source layer (2) and the channel layer (5).

Patent Publication Number: EP2674978

Year filing: 2020

Year approval: 2020

Year publication: 2020

Status: Assigned

Technology domains: Semiconductors

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven