A bilayer graphene tunneling field effect transistor

A bilayer graphene tunneling field effect transistor comprising: a. A bilayer graphene layer, and b. At least a top gate electrode and a bottom gate electrode, wherein said at least a top gate electrode and a bottom electrode are appropriately positioned relative to one another so that the following regions are electrically induced in the chemically undoped bilayer graphene layer upon appropriate biasing of the gate electrodes: i. a source region, ii. a channel region, and iii. a drain region.

Patent Publication Number: EP2887398

Year filing: 2014

Year approval: 2017

Year publication: 2017

Status: Assigned

Technology domains: Semiconductors

Validated for IOF-key: Yes

Attributed to: Associatie KULeuven