Onderzoeker
Shuzhen You
- Disciplines:Nanotechnologie, Ontwerptheorieën en -methoden
Affiliaties
- Geassocieerde Afdeling ESAT - INSYS (INSYS), Integrated Systems (Afdeling)
Lid
Vanaf1 aug 2020 → 31 jul 2012 - Geassocieerde Afdeling ESAT - INSYS, Integrated Systems (Afdeling)
Lid
Vanaf15 mrt 2011 → 31 jul 2012 - Departement Elektrotechniek (ESAT) (Departement)
Lid
Vanaf24 nov 2007 → 14 mrt 2011
Publicaties
1 - 10 van 32
- Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI(2019)
Auteurs: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pagina's: 553 - 560 - Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process(2018)
Auteurs: S Stoffels, K Geens, Xiangdong Li, D Wellekens, Shuzhen You, M Zhao, M Borga, E Zanoni, G Meneghesso, M Meneghini, et al.
Pagina's: 1387 - 1394 - Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration(2018)
Auteurs: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pagina's: 999 - 1002 - Investigation on Carrier Transport Through AIN Nucleation Layer From Differently Doped Si(111) Substrates(2018)
Auteurs: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pagina's: 1721 - 1727 - An Industry-Ready 200 mm p-GaN E-mode GaN-on-Si power Technology(2018)
Auteurs: NE Posthuma, Shuzhen You, S Stoffels, D Wellekens, H Liang, M Zhao, B De Jaeger, K Geens, N Ronchi, S Decoutere, et al.
Pagina's: 284 - 287Aantal pagina's: 4 - Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures(2017)
Auteurs: Tian-Li Wu, Benoit Bakeroot, Hu Liang, Niels Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon, Stefaan Decoutere
Pagina's: 1696 - 1699 - Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs(2017)
Auteurs: N Ronchi, B Bakeroot, Shuzhen You, J Hu, S Stoffels, T-L Wu, B De Jaeger, S Decoutere
- Device breakdown optimization of Al2O3/GaN MISFETs(2016)
Auteurs: Tian-Li Wu, Shuzhen You, Jie Hu
Pagina's: 1 - 4 - Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers(2016)
Auteurs: Shuzhen You, Guido Groeseneken
Pagina's: 1229 - 1235 - Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination(2016)
Auteurs: Shuzhen You, Guido Groeseneken
Pagina's: 3451 - 3458