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Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process

Tijdschriftbijdrage - Tijdschriftartikel

© Materials Research Society 2018. In this paper new materials and substrate approaches are discussed which have potential to provide (Al)GaN buffers with a better crystal quality, higher critical electrical field, or thickness and have the potential to offer co-integration of GaN switches at different reference potentials, while maintaining lower wafer bow and maintaining complementary metal-oxide semiconductor (CMOS) compatibility. Engineered silicon substrates, silicon on insulator (SOI) and coefficient of thermal expansion (CTE)-matched substrates have been investigated and benchmarked with respect to each other. SOI and CTE-matched offer benefits for scaling to higher voltage, while a trench isolation process combined with an oxide interlayer substrate allows co-integration of GaN components in a GaN-integrated circuit (IC).
Tijdschrift: MRS Communications
ISSN: 2159-6859
Issue: 4
Volume: 8
Pagina's: 1387 - 1394
Jaar van publicatie:2018