Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination

© 1963-2012 IEEE. In this paper, we have extensively investigated the impact of anode recess on the reverse leakage current, forward voltage (V F), and dynamic characteristics of Au-free AlGaN/GaN Schottky barrier diodes with a gated edge termination (GET-SBDs) on 200-mm silicon substrates. By increasing the number of atomic layer etching (ALE) cycles for anode recessing, we have found that: 1) the reverse leakage current is strongly suppressed due to a better electrostatic control for pinching off the channel in the GET region; a median leakage current of ∼ 1 nA/mm and an I ON I OFF ratio higher than 108 have been achieved in GET-SBDs with six ALE cycles; 2) the forward voltage (∼ 1.3 V) is almost independent of the ALE cycles, taking into account its statistical distribution across the wafers; 3) when the remaining AlGaN barrier starts to be very thin (in the case of six ALE cycles), a spread of the ON-resistance, mainly attributed to the GET region, can occur due to the difficult control of the remaining AlGaN thickness and surface quality; and 4) the dynamic forward voltage of GET-SBDs shows a mild dependence on the ALE process in pulsed I-V characterization, and a more ALE-dependent dynamic ON-resistance is observed.

Jaar van publicatie:2016

BOF-keylabel:ja

IOF-keylabel:ja

BOF-publication weight:1

CSS-citation score:2

Auteurs:International

Authors from:Government, Higher Education