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Onderzoeker
Xiangdong Li
- Disciplines:Nanotechnologie, Sensoren, biosensoren en slimme sensoren, Andere elektrotechniek en elektronica, Ontwerptheorieën en -methoden
Affiliaties
- Elektronische Circuits en Systemen (ECS) (Afdeling)
Lid
Vanaf1 aug 2020 → 31 dec 2020 - Afdeling ESAT - MICAS, Micro-elektronica en Sensoren (Afdeling)
Lid
Vanaf25 feb 2016 → 31 jul 2020
Projecten
1 - 1 of 1
- Betrouwbaarheid en integratie van GaN vermogenscomponenten en circuits op GaN-op-SOIVanaf24 feb 2017 → 24 nov 2020Financiering: Eigen Middelen zoals patrimonium, inschrijvingsgelden, giften, ....
Publicaties
1 - 10 van 16
- Integration of 650 V GaN Power ICs on 200 mm Engineered Substrates(2020)
Auteurs: Xiangdong Li, Guido Groeseneken
Pagina's: 534 - 538 - Observation of Dynamic VTH of p-GaN Gate HEMTs by Fast Sweeping Characterization(2020)
Auteurs: Xiangdong Li, Zhicheng Wu, Guido Groeseneken
Pagina's: 577 - 580 - Modeling of the Vertical Leakage Current in AlN/Si Heterojunctions for GaN Power Applications(2020)
Auteurs: Xiangdong Li
Pagina's: 595 - 599 - Influence of Driver Integration on GaN Enhancement Mode Transistor Performance(2020)
Auteurs: Martijn Deckers, Johan Driesen, Simon Ravyts, Xiangdong Li
Pagina's: 480 - 485Aantal pagina's: 6 - Monolithic integration of gate driver and p-GaN power HEMT for MHz-switching implemented by e-mode GaN-on-SOI process(2019)
Auteurs: Xiangdong Li
- Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates(2019)
Auteurs: Xiangdong Li, Guido Groeseneken
Pagina's: 1499 - 1502 - 650 V p-GaN Gate Power HEMTs on 200 mm Engineered Substrates(2019)
Auteurs: Xiangdong Li
Pagina's: 297 - 301Aantal pagina's: 5 - Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI(2019)
Auteurs: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pagina's: 553 - 560 - Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process(2018)
Auteurs: S Stoffels, K Geens, Xiangdong Li, D Wellekens, Shuzhen You, M Zhao, M Borga, E Zanoni, G Meneghesso, M Meneghini, et al.
Pagina's: 1387 - 1394 - Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration(2018)
Auteurs: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pagina's: 999 - 1002