Researcher
Shuzhen You
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 31 Jul 2012 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From15 Mar 2011 → 31 Jul 2012 - Department of Electrical Engineering (ESAT) (Department)
Member
From24 Nov 2007 → 14 Mar 2011
Publications
1 - 10 of 32
- Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI(2019)
Authors: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pages: 553 - 560 - Evaluation of novel carrier substrates for high reliability and integrated GaN devices in a 200 mm complementary metal-oxide semiconductor compatible process(2018)
Authors: S Stoffels, K Geens, Xiangdong Li, D Wellekens, Shuzhen You, M Zhao, M Borga, E Zanoni, G Meneghesso, M Meneghini, et al.
Pages: 1387 - 1394 - Suppression of the Backgating Effect of Enhancement-Mode p-GaN HEMTs on 200-mm GaN-on-SOI for Monolithic Integration(2018)
Authors: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pages: 999 - 1002 - Investigation on Carrier Transport Through AIN Nucleation Layer From Differently Doped Si(111) Substrates(2018)
Authors: Xiangdong Li, Shuzhen You, Guido Groeseneken
Pages: 1721 - 1727 - An Industry-Ready 200 mm p-GaN E-mode GaN-on-Si power Technology(2018)
Authors: NE Posthuma, Shuzhen You, S Stoffels, D Wellekens, H Liang, M Zhao, B De Jaeger, K Geens, N Ronchi, S Decoutere, et al.
Pages: 284 - 287Number of pages: 4 - Analysis of the Gate Capacitance-Voltage Characteristics in p-GaN/AlGaN/GaN Heterostructures(2017)
Authors: Tian-Li Wu, Benoit Bakeroot, Hu Liang, Niels Posthuma, Shuzhen You, Nicolo Ronchi, Steve Stoffels, Denis Marcon, Stefaan Decoutere
Pages: 1696 - 1699 - Optimization of the source field-plate design for low dynamic RDS-ON dispersion of AlGaN/GaN MIS-HEMTs(2017)
Authors: N Ronchi, B Bakeroot, Shuzhen You, J Hu, S Stoffels, T-L Wu, B De Jaeger, S Decoutere
- Device breakdown optimization of Al2O3/GaN MISFETs(2016)
Authors: Tian-Li Wu, Shuzhen You, Jie Hu
Pages: 1 - 4 - Leakage and trapping characteristics in Au-free AlGaN/GaN Schottky barrier diodes fabricated on C-doped buffer layers(2016)
Authors: Shuzhen You, Guido Groeseneken
Pages: 1229 - 1235 - Statistical analysis of the impact of anode recess on the electrical characteristics of AlGaN/GaN Schottky diodes with gated edge termination(2016)
Authors: Shuzhen You, Guido Groeseneken
Pages: 3451 - 3458