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Researcher
Anne Verhulst
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → Today - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Apr 2010 - Electrical Energy Systems and Applications (ELECTA) (Division)
Member
From1 Aug 2020 → 31 Dec 2007 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Oct 2008 → 30 Apr 2010
Projects
1 - 5 of 5
- Enabling 3D scanning probe microscopy for nanoelectronics device analysis and TCAD calibration of advanced technology nodesFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- The demonstration of next DRAM with 3D structure using novel channel materialFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Calibration of TCAD process simulators towards N2 with advanced 2D/3D metrology solutions including SPM-based SSRM techniqueFrom22 Jun 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of hybrid nanofluidic-nanoelectronic devices for single-molecule biosensingFrom26 Aug 2021 → 22 Apr 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of the tunnel field-effect transistor.From19 Oct 2009 → 30 Apr 2010Funding: BOF - Other initiatives
Publications
31 - 40 of 101
- Uniform strain in heterostructure tunnel field-effect transistors(2016)
Authors: Devin Verreck, Anne Verhulst, Guido Groeseneken
Pages: 337 - 340 - Full zone spectral solver for the optimization of line and point tunnel field-effect transistors(2015)
Authors: Devin Verreck, Anne Verhulst, Guido Groeseneken
- Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements(2015)
Authors: Quentin Smets, Anne Verhulst, Devin Verreck, Marc Heyns
Pages: 1 - 4 - Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions(2015)
Authors: Quentin Smets, Anne Verhulst, Clement Merckling, Marc Heyns
Pages: 62 - 67 - New devices for internet of things: A circuit level perspective(2015)
Authors: Wim Dehaene, Anne Verhulst
Pages: 25 - Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET(2015)
Authors: Ali Reza Alian, Jacopo Franco, Anne Verhulst, Devin Verreck
Pages: 823 - 826 - Novel method to determine the band offset in hetero staggered bandgap TFET using Esaki diodes(2015)
Authors: Anne Verhulst, Marc Heyns
Pages: 251 - 252 - 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors(2015)
Authors: Anne Verhulst, Ashish Dabral, Guido Groeseneken
Number of pages: 4 - Impact of field-induced quantum confinement on the onset of tunneling field-effect transistors: Experimental verification(2014)
Authors: Anne Verhulst, Koen Martens, Devin Verreck, Marc Heyns
- Investigation of the Subthreshold Swing in Vertical Tunnel-FETs Using H2 and D2 Anneals(2014)
Authors: Anne Verhulst
Pages: 359 - 364
Patents
1 - 10 of 10
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Layered structure of a p-tfet (Inventor)
- Layered structure of a p-tfet (Inventor)
- Drain extension region for tunnel fet (Inventor)
- Tunnel field-effect transistors based on silicon nanowires (Inventor)
- Drain extension region for tunnel fet (Inventor)
- A tunnel field-effect transistor with gated tunnel barrier (Inventor)
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)