Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements

The effective bandgap is a crucial design parameter of heterojunction tunneling field-effect transistors. In this letter, we demonstrate a method to measure the effective bandgap directly from the band-to-band tunneling current of a heterojunction Esaki diode, of which we only require knowledge of the electrostatic potential profile. The method is based on a characteristic exponentially increasing current with forward bias, caused by sharp energy filtering at cryogenic temperature. We apply this method experimentally to a n+In0.53Ga0.47As/pGaAs(0.5)Sb(0.5) Esaki diode and define requirements to apply it to other heterojunctions.

Publication year:2015

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BOF-publication weight:1

CSS-citation score:1

Authors from:Government, Higher Education

Accessibility:Open