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Researcher
Quentin Smets
- Disciplines:Ceramic and glass materials, Materials science and engineering, Semiconductor materials, Other materials engineering
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Aug 2020 → 15 Aug 2016 - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Jun 2010 - Surface and Interface Engineered Materials (Division)
Member
From1 Apr 2016 → 15 Aug 2016 - Department of Materials Engineering (Department)
Member
From3 Oct 2011 → 31 Dec 2015
Projects
1 - 1 of 1
- Integration of a IIIV p-channel tunnel-field-effect transistor for ultra-low power nano-CMOS applications.From3 Oct 2011 → 1 Jul 2016Funding: IWT personal funding - strategic basic research grants
Publications
1 - 5 of 5
- Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements(2015)
Authors: Quentin Smets, Anne Verhulst, Devin Verreck, Marc Heyns
Pages: 1 - 4 - Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions(2015)
Authors: Quentin Smets, Anne Verhulst, Clement Merckling, Marc Heyns
Pages: 62 - 67 - InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models(2014)
Authors: Quentin Smets, Devin Verreck, Anne Verhulst, Clement Merckling, Wilfried Vandervorst, Bart Sorée, Guido Groeseneken, Marc Heyns
Pages: 1 - 9 - Figure of merit for and identification of sub-60 mV/decade devices(2013)
Authors: William Vandenberghe, Anne Verhulst, Guido Groeseneken, Quentin Smets, Marc Heyns
Pages: 13510 - 1 - Figure of merit for and identification of sub-60 mV/decade devices
Authors: William Vandenberghe, Anne S Verhulst, Bart Soree, Wim Magnus, Guido Groeseneken, Quentin Smets, Marc Heyns, Massimo V Fischetti
Pages: 13510 - 1
Patents
1 - 4 of 4
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)