Researcher
Anne Verhulst
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → Today - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Apr 2010 - Electrical Energy Systems and Applications (ELECTA) (Division)
Member
From1 Aug 2020 → 31 Dec 2007 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Oct 2008 → 30 Apr 2010
Projects
1 - 5 of 5
- Enabling 3D scanning probe microscopy for nanoelectronics device analysis and TCAD calibration of advanced technology nodesFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- The demonstration of next DRAM with 3D structure using novel channel materialFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Calibration of TCAD process simulators towards N2 with advanced 2D/3D metrology solutions including SPM-based SSRM techniqueFrom22 Jun 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of hybrid nanofluidic-nanoelectronic devices for single-molecule biosensingFrom26 Aug 2021 → 22 Apr 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of the tunnel field-effect transistor.From19 Oct 2009 → 30 Apr 2010Funding: BOF - Other initiatives
Publications
41 - 50 of 101
- Can p-channel tunnel-field-effect transistors perform as good as n-channel tunnel-FETs?(2014)
Authors: Anne Verhulst, Devin Verreck, Mohammad Ali Pourghaderi, Guido Groeseneken
Pages: 43103 - 43103 - On the local conductivity of individual diamond seeds and their impact on the interfacial resistance of boron-doped diamond films(2014)
Authors: Menelaos - Charalampos Tsigkourakos, Anne Verhulst, Wilfried Vandervorst
Pages: 103 - 112 - Compressively strained SiGe band-to-band tunneling model calibration based on p-i-n diodes and prospect of strained SiGe tunneling field-effect transistors(2014)
Authors: Kuo-hsing Kao, Anne Verhulst, Wilfried Vandervorst, Marc Heyns, Kristin De Meyer
Pages: 1 - 11 - Quantum mechanical solver for confined heterostructure tunnel field-effect transistors(2014)
Authors: Devin Verreck, Anne Verhulst, Guido Groeseneken
- Perspective of tunnel-FET for future low-power technology nodes(2014)
Authors: Anne Verhulst, Devin Verreck, Kristin De Meyer, Guido Groeseneken, Marc Heyns
Pages: 717 - 720 - Improved source design for p-type tunnel field-effect transistors: Towards truly complementary logic(2014)
Authors: Devin Verreck, Anne Verhulst, Guido Groeseneken
Pages: 243506 - Band-to-band tunneling MOSCAPs for rapid TFET characterization(2014)
Authors: Anne Verhulst, Devin Verreck, Clement Merckling, Koen Martens, Marc Heyns
Pages: 63 - 64 - Tensile strained Ge tunnel field-effect transistors: k-p material modeling and numerical device simulation(2014)
Authors: Anne Verhulst, Mohammad Ali Pourghaderi, Kristin De Meyer
Pages: 44505 - InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models(2014)
Authors: Quentin Smets, Devin Verreck, Anne Verhulst, Clement Merckling, Wilfried Vandervorst, Bart Sorée, Guido Groeseneken, Marc Heyns
Pages: 1 - 9 - Fabrication and analysis of a Si/Si0.55Ge0.45 heterojunction line tunnel FET(2014)
Authors: Anne Verhulst, Kuo-hsing Kao, Guido Groeseneken, Marc Heyns
Pages: 707 - 715
Patents
1 - 10 of 10
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Layered structure of a p-tfet (Inventor)
- Layered structure of a p-tfet (Inventor)
- Drain extension region for tunnel fet (Inventor)
- Tunnel field-effect transistors based on silicon nanowires (Inventor)
- Drain extension region for tunnel fet (Inventor)
- A tunnel field-effect transistor with gated tunnel barrier (Inventor)
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)