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Researcher
Anne Verhulst
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → Today - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Apr 2010 - Electrical Energy Systems and Applications (ELECTA) (Division)
Member
From1 Aug 2020 → 31 Dec 2007 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Oct 2008 → 30 Apr 2010
Projects
1 - 5 of 5
- Enabling 3D scanning probe microscopy for nanoelectronics device analysis and TCAD calibration of advanced technology nodesFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- The demonstration of next DRAM with 3D structure using novel channel materialFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Calibration of TCAD process simulators towards N2 with advanced 2D/3D metrology solutions including SPM-based SSRM techniqueFrom22 Jun 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of hybrid nanofluidic-nanoelectronic devices for single-molecule biosensingFrom26 Aug 2021 → 22 Apr 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of the tunnel field-effect transistor.From19 Oct 2009 → 30 Apr 2010Funding: BOF - Other initiatives
Publications
21 - 30 of 101
- Pulsed I-V on TFETs: Modeling and measurements(2017)
Authors: Anne Verhulst, Marc Heyns
Pages: 1489 - 1497 - Inherent transmission probability limit between valence-band and conduction band states and calibration of tunnel-FET parasitics(2017)
Authors: Anne Verhulst, Mazharuddin Mohammed, Jasper Bizindavyi, Marc Heyns
Number of pages: 3 - Electric-field induced quantum broadening of the characteristic energy level of traps in semiconductors and oxides(2016)
Authors: Mazharuddin Mohammed, Anne Verhulst, Devin Verreck, Guido Groeseneken
Pages: 1 - 9 - InGaAs tunnel FET with sub-nanometer EOT and sub-60 mV/dec sub-threshold swing at room temperature(2016)
Authors: Devin Verreck, Anne Verhulst
Pages: 243502 - The Tunnel Field-Effect Transistor(2016)
Authors: Devin Verreck, Guido Groeseneken, Anne Verhulst
Pages: 1 - 24 - Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction(2016)
Authors: Anne Verhulst, Marc Heyns
Pages: 4248 - 4254 - Influence of doping and tunneling interface stoichiometry on n+In0.5Ga0.5As/p+GaAs0.5Sb0.5 Esaki diode behavior(2016)
Authors: Anne Verhulst, Clement Merckling, Marc Heyns
Pages: 73 - 80 - Impact of InxGa1-x composition and source Zn diffusion temperature on intrinsic voltage gain in InGaAs TFETs(2016)
Authors: Anne Verhulst, Cor Claeys
Number of pages: 3 - Non-uniform strain in lattice-mismatched heterostructure tunnel field-effect transistors(2016)
Authors: Devin Verreck, Anne Verhulst, Guido Groeseneken
Pages: 412 - 415 - Analog parameters of solid source Zn diffusion InXGa1-XAs nTFETs down to 10K(2016)
Authors: Anne Verhulst, Cor Claeys
Pages: 124001
Patents
1 - 10 of 10
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Layered structure of a p-tfet (Inventor)
- Layered structure of a p-tfet (Inventor)
- Drain extension region for tunnel fet (Inventor)
- Tunnel field-effect transistors based on silicon nanowires (Inventor)
- Drain extension region for tunnel fet (Inventor)
- A tunnel field-effect transistor with gated tunnel barrier (Inventor)
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)