Researcher
Annelies Delabie
- Disciplines:Physical chemistry, Theoretical and computational chemistry, Other chemical sciences, Biochemistry and metabolism, Medical biochemistry and metabolism, Atmospheric sciences
Affiliations
- Quantum Chemistry and Physical Chemistry (Division)
Member
From1 Oct 2012 → Today
Projects
1 - 10 of 19
- Ferroelectric memories: multi-layers stacks with tailored physical and electric properties by atomic layer depositionFrom20 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic-scale bottom-up fabrication: Area-Selective Deposition (ASD) of Si-based dielectrics and its application in IC manufacturingFrom15 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Interface study of ferroelectric/oxide semiconductor stacks and devicesFrom20 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Area-selective deposition mechanisms when pattern dimensions reach the nanoscaleFrom11 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic layer deposition of two-dimensional transition metal dichalcogenides and ovonic threshold switching materials: A new computational framework for precursor designFrom1 Oct 2022 → TodayFunding: FWO Strategic Basic Research Grant
- Alternative semiconducting oxides for future DRAM applicationsFrom25 May 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Creating dielectric layers on two-dimensional (2D) semiconductors: chemical and physical mechanismsFrom18 Jan 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Mechanisms and Selectivity during Atomic Layer Deposition of Germanium Chalcogenides for Storage Class Memory ApplicationsFrom1 Oct 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Dielectric Nanosheets for Scaled Two-Dimensional (2D) Material DevicesFrom22 Jan 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Towards graphoepitaxy of semiconducting 2D single crystals on dielectric substrate patterns for next generation nanoelectronic devicesFrom5 Jan 2021 → TodayFunding: FWO Strategic Basic Research Grant
Publications
131 - 140 of 180
- Atomic Layer Deposition of Ruthenium on a Titanium Nitride Surface: A Density Functional Theory Study
Authors: Quan Phung, Steven Vancoillie, Geoffrey Pourtois, Johan Swerts, Kristine Pierloot, Annelies Delabie
Pages: 19442 - 19453 - On the process and material sensitivities for high-k based dielectrics
Authors: Annelies Delabie, Adrien Hardy, Jorge Kittl
Pages: 693 - 698 - Comparison between Si/SiO2 mid-gap interface states and deep levels associated with silicon-oxygen superlattices in p-type silicon
Authors: Eddy Simoen, Suseendran Jayachandran, Annelies Delabie, Matty Caymax, Marc Heyns
Pages: 718 - 723 - Replacing SiO2 - Material and processing aspects of new dielectrics
Authors: Stefan De Gendt, Annelies Delabie
Pages: 3 - 13 - Characterization of Porous Structures in Advanced Low-k Films with Thin TaN Layers Using Monoenergetic Positron Beams
Authors: Akira Uedono, Patrick Verdonck, Annelies Delabie, Johan Swerts, Thomas Witters, Thierry Conard, Mikhail R Baklanov, Sven Van Elshocht, Nagayasu Oshima, Ryoichi Suzuki
- Nucleation and Growth Mechanisms of 2D Semiconductor/high-k Dielectric Heterostacks
Authors: Haodong Zhang, Annelies Delabie, Wilfried Vandervorst
- S-passivation of the Ge gate stack: Tuning the gate stack properties by changing the atomic layer deposition oxidant precursor
Authors: Han Chung Lin, Annelies Delabie, Stefan De Gendt
- Atomic layer deposition of 2D transition metal dichalogenides
Authors: Annelies Delabie, Matty Caymax, Benjamin Groven, Markus Heyne, Karel Haesevoets, Johan Meersschaut, Thomas Nuytten, Hugo Bender, Thierry Conard, Patrick Verdonck, et al.
Pages: 16 - 17 - Chemisorption Reaction Mechanisms for Atomic Layer Deposition of High-k Oxides on High Mobility Channels
Authors: Annelies Delabie, Kristine Pierloot
Pages: 343 - 353 - Capacitance-voltage characterization of GaAs-Al₂O₃ interfaces
Authors: Han Chung Lin, Koen Martens, Annelies Delabie, Marc Heyns
Pages: 1 - 3
Patents
1 - 10 of 10
- Method of manufacturing a semiconductor structure (Inventor)
- Method of manufacturing a semiconductor structure (Inventor)
- A method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- A method for forming a silicide gate for a semiconductor device (Inventor)
- Method of producing transition metal dichalcogenide layer (Inventor)
- Method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- Method of forming a feature of a target material on a substrate (Inventor)
- METHOD OF PRODUCING TRANSITION METAL DICHALCOGENIDE LAYER (Inventor)
- Method for selectively depositing noble metals on metal/metal nitride substrates (Inventor)
- Oxygen monolayer on a semiconductor (Inventor)