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Researcher
Annelies Delabie
- Disciplines:Physical chemistry, Theoretical and computational chemistry, Other chemical sciences, Biochemistry and metabolism, Medical biochemistry and metabolism, Atmospheric sciences
Affiliations
- Quantum Chemistry and Physical Chemistry (Division)
Member
From1 Oct 2012 → Today
Projects
11 - 19 of 19
- Area-selective deposition: a bottom-up technique for creating nanoscale structuresFrom14 Sep 2020 → 1 Jun 2023Funding: Own budget, for example: patrimony, inscription fees, gifts
- Atmospheric pressure plasma deposition of poly(ethylene oxide)-based redox polymers for enzymatic sensingFrom12 Aug 2020 → TodayFunding: FWO Strategic Basic Research Grant
- Future generation Photomasks for Advanced LithographyFrom9 Oct 2019 → 12 Dec 2023Funding: Own budget, for example: patrimony, inscription fees, gifts
- Area selective deposition, a bottom-up approach for the fabrication of nano-electronic devicesFrom1 Jan 2019 → 10 Feb 2023Funding: FWO Strategic Basic Research Grant
- PHD researcher on structure of 2Dsemiconductor-dielectrics interfaces.From2 Aug 2018 → 30 Nov 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Surface-dependent adsorption and diffusion processes in area-selective deposition of rutheniumFrom1 Nov 2015 → 3 Dec 2020Funding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic layer deposition of single and few layered transition metaldichalcogenides for future logic applications.From21 Jan 2015 → 31 Dec 2018Funding: IWT personal funding - strategic basic research grants
- Nucleation and Growth Mechanisms of 2D Semiconductor/high-k Dielectric HeterostacksFrom1 Oct 2014 → 26 Sep 2018Funding: Own budget, for example: patrimony, inscription fees, gifts
- Chemisorption reaction mechanisms for ruthenium atomic layer deposition (ALD): an atomistic insight.From1 Oct 2012 → 30 Sep 2016Funding: FWO fellowships
Publications
1 - 10 of 180
- Selectivity and Growth Rate Modulations for Ruthenium Area-selective Deposition by Co-Reagent and Nanopattern Design(2024)
Authors: Niels Claessens, Annelies Delabie
- Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface(2024)
Authors: Serkan Koylan, Annelies Delabie
Pages: 3173 - 3186 - Future generation Photomasks for Advanced Lithography(2023)
Authors: Devesh Ratnakar Thakare, Annelies Delabie
- Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective(2023)
Authors: Devesh Ratnakar Thakare, Annelies Delabie
- 300 mm-wafer metrology for area-selective deposition in nanoscale patterns: A case study for ruthenium atomic layer deposition(2023)
Authors: Annelies Delabie
- Quantified Uniformity and Selectivity of TiO2 Films in 45-nm Half Pitch Patterns Using Area-Selective Deposition Supercycles(2023)
Authors: Annelies Delabie
- Probing the spatial dimensions of nanoscale patterns with Rutherford backscattering spectrometry(2023)
Authors: Niels Claessens, Annelies Delabie, André Vantomme, Wilfried Vandervorst, Johan Meersschaut
Pages: 174 - 181 - Optimizing extreme ultraviolet lithography imaging metrics as a function of absorber thickness and illumination source: a simulation case study of Ta-Co alloy(2023)
Authors: Annelies Delabie
- A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition(2023)
Authors: Annelies Delabie
Pages: 10303 - 10314 - Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions(2023)
Authors: Jan-Willem Clerix, Annelies Delabie
Patents
1 - 10 of 10
- Method of manufacturing a semiconductor structure (Inventor)
- Method of manufacturing a semiconductor structure (Inventor)
- A method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- A method for forming a silicide gate for a semiconductor device (Inventor)
- Method of producing transition metal dichalcogenide layer (Inventor)
- Method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- Method of forming a feature of a target material on a substrate (Inventor)
- METHOD OF PRODUCING TRANSITION METAL DICHALCOGENIDE LAYER (Inventor)
- Method for selectively depositing noble metals on metal/metal nitride substrates (Inventor)
- Oxygen monolayer on a semiconductor (Inventor)