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Researcher
Annelies Delabie
- Disciplines:Physical chemistry, Theoretical and computational chemistry, Other chemical sciences, Biochemistry and metabolism, Medical biochemistry and metabolism, Atmospheric sciences
Affiliations
- Quantum Chemistry and Physical Chemistry (Division)
Member
From1 Oct 2012 → Today
Projects
1 - 10 of 19
- Ferroelectric memories: multi-layers stacks with tailored physical and electric properties by atomic layer depositionFrom20 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic-scale bottom-up fabrication: Area-Selective Deposition (ASD) of Si-based dielectrics and its application in IC manufacturingFrom15 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Interface study of ferroelectric/oxide semiconductor stacks and devicesFrom20 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Area-selective deposition mechanisms when pattern dimensions reach the nanoscaleFrom11 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic layer deposition of two-dimensional transition metal dichalcogenides and ovonic threshold switching materials: A new computational framework for precursor designFrom1 Oct 2022 → TodayFunding: FWO Strategic Basic Research Grant
- Alternative semiconducting oxides for future DRAM applicationsFrom25 May 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Creating dielectric layers on two-dimensional (2D) semiconductors: chemical and physical mechanismsFrom18 Jan 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Mechanisms and Selectivity during Atomic Layer Deposition of Germanium Chalcogenides for Storage Class Memory ApplicationsFrom1 Oct 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Dielectric Nanosheets for Scaled Two-Dimensional (2D) Material DevicesFrom22 Jan 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Towards graphoepitaxy of semiconducting 2D single crystals on dielectric substrate patterns for next generation nanoelectronic devicesFrom5 Jan 2021 → TodayFunding: FWO Strategic Basic Research Grant
Publications
141 - 150 of 180
- Ozone-Based Metal Oxide Atomic Layer Deposition: Impact of N-2/O-2 Supply Ratio in Ozone Generation
Authors: Annelies Delabie, Jozef Peeters
Pages: II176 - II178 - Quasi 2D Si-O Superlattices for Future Nanoelectronic Applications
Authors: Suseendran Jayachandran, Marc Heyns, Annelies Delabie
- HfO2 atomic layer deposition using HfCl4/H2O: the first reaction cycle
Authors: Annelies Delabie, Marc Heyns, Chris Vinckier, Stefan De Gendt
Pages: 257 - 267 - Silicon orientation effects in the atomic layer deposition of Hafnium oxide
Authors: Laura Nyns, Annelies Delabie, Marc Heyns, Chris Vinckier, Stefan De Gendt
Pages: G9 - G12 - Enhancing Performance and Function of Polymethacrylate Extreme Ultraviolet Resists Using Area-Selective Deposition
Authors: Annelies Delabie
Pages: 2016 - 2026 - Impact of the starting surface on the film characteristics of thermal Ru ALD for metal-insulator-metal applications
Authors: Annelies Delabie, Benjamin Groven, Johan Meersschaut
- New Mechanisms for Ozone-Based ALD Growth of High-k Dielectrics via Nitrogen-Oxygen Species
Authors: Annelies Delabie
Pages: 91 - 99 - Impact of Precursor Chemistry and Process Conditions on the Scalability of ALD HfO2 Gate Dielectrics
Authors: Annelies Delabie, Stefan De Gendt
Pages: G26 - G31 - HfO2 Atomic Layer Deposition Using HfCl4/H2O: The First Reaction Cycle
Authors: Laura Nyns, Annelies Delabie, Marc Heyns, Chris Vinckier, Stefan De Gendt
Pages: G269 - G273 - Mechanisms for undesired nucleation on H-terminated Si and dimethylamino-trimethylsilane passivated SiO2 during TiO2 area-selective atomic layer deposition
Authors: Annelies Delabie
Patents
1 - 10 of 10
- Method of manufacturing a semiconductor structure (Inventor)
- Method of manufacturing a semiconductor structure (Inventor)
- A method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- A method for forming a silicide gate for a semiconductor device (Inventor)
- Method of producing transition metal dichalcogenide layer (Inventor)
- Method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- Method of forming a feature of a target material on a substrate (Inventor)
- METHOD OF PRODUCING TRANSITION METAL DICHALCOGENIDE LAYER (Inventor)
- Method for selectively depositing noble metals on metal/metal nitride substrates (Inventor)
- Oxygen monolayer on a semiconductor (Inventor)