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Researcher
Quentin Smets
- Keywords:Materials engineering
Affiliations
- Surface and Interface Engineered Materials (Division)
Member
From1 Apr 2016 → 15 Aug 2016
Projects
1 - 1 of 1
- Integration of a IIIV p-channel tunnel-field-effect transistor for ultra-low power nano-CMOS applications.From3 Oct 2011 → 1 Jul 2016Funding: IWT personal funding - strategic basic research grants
Publications
1 - 5 of 5
- Extracting the effective bandgap of heterojunctions using Esaki diode I-V measurements(2015)
Authors: Quentin Smets, Anne Verhulst, Salim El Kazzi, Devin Verreck, Olivier Richard, Hugo Bender, Nadine Collaert, Anda Mocuta, Aaron Thean, Marc Heyns
Pages: 1 - 4 - Staggered band gap n+In0.5Ga0.5As/p + GaAs0.5Sb0.5 Esaki diode investigations for TFET device predictions(2015)
Authors: Quentin Smets, Anne Verhulst, Clement Merckling, Marc Heyns
Pages: 62 - 67 - InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models(2014)
Authors: Quentin Smets, Devin Verreck, Anne Verhulst, Clement Merckling, Wilfried Vandervorst, Bart Sorée, Guido Groeseneken, Marc Heyns
Pages: 1 - 9 - Figure of merit for and identification of sub-60 mV/decade devices(2013)
Authors: William Vandenberghe, Anne S Verhulst, Bart Soree, Wim Magnus, Guido Groeseneken, Quentin Smets, Marc Heyns, Massimo V Fischetti
Pages: 13510 - 1 - Figure of merit for and identification of sub-60 mV/decade devices(2013)
Authors: William Vandenberghe, Anne Verhulst, Bart Sorée, Guido Groeseneken, Quentin Smets, Marc Heyns
Pages: 13510 - 1