< Back to previous page

Publication

Figure of merit for and identification of sub-60 mV/decade devices

Journal Contribution - Journal Article

A figure of merit I 60 is proposed for sub-60 mV/decade devices as the highest current where the input characteristics exhibit a transition from sub- to super-60 mV/decade behavior. For sub-60 mV/decade devices to be competitive with metal-oxide-semiconductor field-effect devices, I 60 has to be in the 1-10 μA/μm range. The best experimental tunnel field-effect transistors (TFETs) in the literature only have an I 60 of 6 × 10-3 μ A / μ m but using theoretical simulations, we show that an I 60 of up to 10 μ A / μ m should be attainable. It is proven that the Schottky barrier FET (SBFET) has a 60 mV/decade subthreshold swing limit while combining a SBFET and a TFET does improve performance. © 2013 American Institute of Physics.
Journal: Applied Physics Letters
ISSN: 0003-6951
Issue: 1
Volume: 102
Pages: 13510 - 1
Publication year:2013
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:3
Authors:International
Authors from:Government, Higher Education
Accessibility:Open