Drain extension region for tunnel fet KU Leuven
A Tunnel Field-Effect Transistor comprising a source-channel-drain structure, the source-channel-drain structure comprising a source region doped with a dopant element having a first dopant type and a first doping concentration; a drain region doped with a dopant element having a second dopant type opposite compared to the first dopant type, and a second doping concentration, a channel region situated between the source region and the drain region and having an intrinsic doping concentration, or lowly doped concentration being lower than the doping concentration of the source and drain ...