RF/High-Speed I/O ESD Protection: Co-optimizing Strategy Between BEOL Capacitance and HBM Immunity in Advanced CMOS Process KU Leuven
Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices KU Leuven
The recent demonstration of ferroelectricity in ultrathin HfO2 has kickstarted a new wave of research into this material. HfO2 in the orthorhombic phase can be considered the first and only truly nanoscale ferroelectric material that is compatible with silicon-based nanoelectronics applications. In this article, we demonstrate the ferroelectric control of the magnetic properties of cobalt deposited on ultrathin aluminum-doped, atomic layer ...
Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates KU Leuven
Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration KU Leuven
On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI KU Leuven
IEEE We investigate BTI charge trapping trends in high-k metal gate (HKMG) stacks with a variety of work function metals. Most BTI models suggest charge trapping in oxide defects is modulated by the applied oxide electric field, which controls the energy barrier for the capture process, irrespective of the gate work function. However, experimental data on capacitors show enhanced or reduced charge trapping at constant oxide electric field for ...
Process-Induced Power-Performance Variability in Sub-5nm III-V Tunnel FETs KU Leuven Vrije Universiteit Brussel
We examine the power-performance variability of a projected sub-5-nm GaAsSb/InGaAs vertical tunnel FET considering various process control tolerances in the state-of-the-art device integration and propose countermeasures in device design. Nominal and three-sigma-corner device characteristics generated in quantum-mechanical/TCAD simulations are used to calibrate a semiempirical compact model, based on which the nominal and variability-inclusive ...