A method for forming a vertical hetero-stack and a device including a vertical hetero-stack

According to an aspect of the present inventive concept there is provided a method for forming a vertical hetero-stack of a first nanostructure and a second nanostructure arranged on an upper surface of the first nanostructure, the first nanostructure formed by a first TMDC material and the second nanostructure formed by a second TMDC material. The method comprises: providing the first nanostructure on a substrate wherein the upper surface of the first nanostructure is formed by a basal plane of the first TMDC material, forming a reactive layer of molecules on the first nanostructure along a periphery of the upper surface, and forming the second nanostructure by a vapor deposition process wherein the second TMDC material nucleates on the reactive agent along said periphery and grows laterally therefrom to form the second nanostructure on said upper surface.

Octrooi-publicatienummer: EP3255656

Jaar aanvraag: 2020

Jaar toekenning: 2020

Jaar van publicatie: 2020

Status: Toegewezen

Technologiedomeinen: Semiconductoren

Gevalideerd voor IOF-sleutel: Ja

Toegewezen aan: Associatie KULeuven