Submicron three-terminal SiGe electromechanical ohmic relay

This paper demonstrates functional NEM cantilever relays fabricated in a CMOS-compatible low-T (400°C) CVD SiGe process flow. Devices with a length in the micrometer range (<3μm), a width in the range 0.2-1μm, a thickness and a gap of below 100nm were successfully fabricated and characterized. A high on/off current ratio (of better than 108:1), a subthreshold swing (S) better than 150V/decade and 'essentially zero' off-state leakage current were experimentally observed. A life time of minimum 10 3 switching cycles was demonstrated. A maximum current density of around 10μA/μm2 without causing stiction due to Joule-heating was found. © 2014 IEEE.

ISBN:9781479935086

Jaar van publicatie:2014

BOF-keylabel:ja

IOF-keylabel:ja

Authors from:Government, Higher Education