Onderzoeker
Francesca De Stefano
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Halfgeleiderfysica (Afdeling)
Lid
Vanaf1 jul 2009 → Heden
Publicaties
1 - 10 van 10
- Injection and transport of electrons in nanometer-thick oxide layers(2023)
Auteurs: Francesca De Stefano, Michel Houssa, Valeri Afanasiev
- High-k Dielectrics And High Work Function Metals For Hybrid Floating Gate NAND Flash Applications(2014)
Auteurs: Francesca De Stefano, Valeri Afanasiev, Jan Van Houdt
Pagina's: 281 - 291 - Modulation of electron barriers between TiNx and oxide insulators (SiO2, Al2O3) using Ti interlayer(2014)
Auteurs: Francesca De Stefano, Valeri Afanasiev, Michel Houssa, Andre Stesmans
Pagina's: 382 - 388 - Influence of metal electrode stoichiometry on the electron barrier height at CuxTe1-x/Al2O3 interfaces for CBRAM applications(2014)
Auteurs: Francesca De Stefano, Valeri Afanasiev, Michel Houssa, Andre Stesmans
Pagina's: 9 - 12 - On the bipolar resistive-switching characteristics of Al2O3- and HfO2-based memory cells operated in the soft-breakdown regime(2014)
Auteurs: Andrea Fantini, Yangyin Chen, Francesca De Stefano, Valeri Afanasiev
Pagina's: 1345012 - 1 - Electron barrier height at CuxTe1-x/Al2O3 interfaces of conducting bridge memory stacks(2013)
Auteurs: Valeri Afanasiev, Francesca De Stefano, Michel Houssa, Andre Stesmans, Jorge Kittl
Pagina's: 34 - 37 - Control of metal/oxide electron barriers in CBRAM cells by low work-function liners(2013)
Auteurs: Francesca De Stefano, Valeri Afanasiev, Michel Houssa, Andre Stesmans
Pagina's: 156 - 159 - Understanding the intrinsic characteristics and memory trade-offs of sub-µA filamentary RRAM operation(2013)
Auteurs: Andrea Fantini, Dirk Wouters, Yangyin Chen, Francesca De Stefano, Valeri Afanasiev
Pagina's: 162 - 163 - Nature of the filament formed in HfO2-based resistive random access memory(2013)
Auteurs: Francesca De Stefano, Michel Houssa, Valeri Afanasiev, Jorge Kittl, Andre Stesmans
Pagina's: 15 - 18 - Semiconducting-like filament formation in TiN/HfO2/TiN resistive switching random access memories(2012)
Auteurs: Francesca De Stefano, Michel Houssa, Jorge Kittl, Valeri Afanasiev, Andre Stesmans
Pagina's: 142102 - 1