< Terug naar vorige pagina
Onderzoeker
Ashish Dabral
- Disciplines:Fysica van gecondenseerde materie en nanofysica
Affiliaties
- Halfgeleiderfysica (Afdeling)
Lid
Vanaf1 nov 2015 → 31 dec 2019
Publicaties
1 - 8 van 8
- Ab initio simulations of 2D materials, interfaces and devices for beyond CMOS applications(2019)
Auteurs: Ashish Dabral, Michel Houssa
- Contact resistance at graphene/MoS2 lateral heterostructures(2019)
Auteurs: Michel Houssa, Konstantina Iordanidou, Ashish Dabral, Ruishen Meng, Valeri Afanasiev, Andre Stesmans
- Contact Resistance at MoS2-Based 2D Metal/Semiconductor Lateral Heterojunctions(2019)
Auteurs: Michel Houssa, Ashish Dabral, Valeri Afanasiev, Andre Stesmans
Pagina's: 760 - 766 - A systematic study of various 2D materials in the light of defect formation and oxidation(2019)
Auteurs: Ashish Dabral, Michel Houssa
Pagina's: 1089 - 1099 - Study of the Intrinsic Limitations of the Contact Resistance of Metal/Semiconductor Interfaces through Atomistic Simulations(2018)
Auteurs: Ashish Dabral, Michel Houssa
Pagina's: N73 - N80 - Probing the intrinsic limitations of the contact resistance of metal/semiconductor interfaces through atomistic simulations(2017)
Auteurs: Ashish Dabral, Hao Yu, Albert de Jamblinne de Meux, Michel Houssa
Pagina's: 303 - 311 - Structural characterization of SnS crystals formed by chemical vapour deposition(2017)
Auteurs: Ankit Nalin Mehta, Haodong Zhang, Ashish Dabral, Annelies Delabie, Michel Houssa, Wilfried Vandervorst
Pagina's: 276 - 287 - 15-band spectral envelope function formalism applied to broken gap tunnel field-effect transistors(2015)
Auteurs: Anne Verhulst, Ashish Dabral, Guido Groeseneken
Aantal pagina's: 4