A Study of Oxide Defects in III-V MOS Devices using Electrical and Mathematical Methods KU Leuven
III-V compound semiconductors are considered as potential channel materials for replacing Silicon in commercial logic devices. One of the major roadblock is the difficulty in developing the gate stack of sufficiently high quality to enable a III-V metal-oxide-semiconductor (MOS) device with high and reliable On performance. The defects in high-k dielectrics are, therefore, one of the key areas of focus for research on III-V based MOS devices. ...