Vertical III-V Gate-all-around Nanowire MOSFETs: Process Integration and Contact Resistance Study KU Leuven
The key to continuous improvement in MOSFET performance is scaling. However, device down-scaling poses some fundamental limitations. One of the common challenges of transistor scaling is the short-channel effect, where a gate-all-around architecture (GAA) could help. In addition, it is getting difficult with lateral devices to extend the technology roadmap beyond sub-10nm technology nodes while respecting the rules of scaling. A vertical ...