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Researcher
Clement Merckling
- Disciplines:Dielectrics, piezoelectrics and ferroelectrics, Electronic (transport) properties, Semiconductors and semimetals, Structural and mechanical properties, Surfaces, interfaces, 2D materials, Materials synthesis, Surface engineering, Nanomaterials, Functional materials
Affiliations
- Surface and Interface Engineered Materials (SIEM) (Division)
Member
From1 Oct 2021 → Today - Department of Materials Engineering (Department)
Member
From1 Oct 2020 → 30 Sep 2021 - Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 15 Oct 2008 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 15 Oct 2008 - Department of Electrical Engineering (ESAT) (Department)
Member
From16 Oct 2007 → 18 Nov 2007
Projects
1 - 10 of 10
- Sputtered Epitaxial Perpendicular MTJs for Next-Generation MRAMFrom31 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Unlocking Layers Detachment of III-V Materials from Epi Substrate by Infrared Laser TechniquesFrom4 Aug 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Next generation materials for electro-optical quantum devicesFrom30 Sep 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Low temperature epitaxy and germanosilicides for ultimate contact scalingFrom5 Sep 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Machine learning applications for nanomechanical characterizationFrom27 Jul 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Realization of Majorana-based qubit devices based on epitaxial oxide heterostructuresFrom2 Mar 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Machine learning opportunities for reliability researchFrom23 Dec 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Unveiling the Cooling Potential of Anomalous Ettingshausen Effect in Magnetic Weyl Semimetals (Wey2Cool)From22 Dec 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Integrated Electro-optical Devices for Quantum ConversionFrom7 Jun 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- MBE growth and characterization of novel topological insulating oxide-based materialsFrom21 Jan 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
Publications
1 - 10 of 137
- Lifetime Assessment of InxGa1-xAs n-Type Hetero-Epitaxial Layers(2022)
Authors: Clement Merckling, Marc Heyns
- Electrical Activity of Extended Defects in Relaxed InxGa1-xAs Hetero-Epitaxial Layers(2020)
Authors: C Claeys, Po-Chun Hsu, Y Mols, H Han, H Bender, F Seidel, P Carolan, Clement Merckling, A Alian, N Waldron, et al.
- Observation of the Stacking Faults in In0.53Ga0.47As by Electron Channeling Contrast Imaging(2019)
Authors: Po-Chun Hsu, Han Han, Clement Merckling, Marc Heyns
- Border traps in Ge/III-V channel devices: Analysis and reliability aspects(2013)
Authors: Ali Reza Alian, Clement Merckling, Cor Claeys
Pages: 444 - 455 - Ge1-xSnx materials: Challenges and applications(2013)
Authors: Federica Gencarelli, Clement Merckling, Geert Eneman, Wilfried Vandervorst, Marc Heyns
Pages: N35 - N40 - Selective area growth of InP in shallow trench isolation (STI) on large scale Si(001) wafer using defect confinement technique(2013)
Authors: Clement Merckling, Niamh Waldron, Sijia Jiang, Marc Heyns, Wilfried Vandervorst
Pages: 33708 - 1 - Site selective integration of III-V materials on Si for nanoscale logic and photonic devices(2012)
Authors: Clement Merckling, Wilfried Vandervorst, Marc Heyns
Pages: 4696 - 4702 - Adsorption of O-2 on Ge(100): Atomic Geometry and Site-Specific Electronic Structure(2012)
Authors: Claudia Fleischmann, Koen Schouteden, Clement Merckling, Chris Van Haesendonck, Kristiaan Temst, André Vantomme
Pages: 9925 - 9929 - InGaAs MOS Transistors Fabricated through a Digital-Etch Gate-Recess Process and the Influence of Forming Gas Anneal on Their Electrical Behavior(2012)
Authors: Clement Merckling, Marc Heyns, Kristin De Meyer
Pages: P310 - P314 - Improved AC conductance and Gray-Brown methods to characterize fast and slow traps in Ge metal–oxide–semiconductor capacitors(2012)
Authors: Clement Merckling, Han Chung Lin
Pages: 54102
Patents
1 - 1 of 1
- Laser devices (Inventor)