< Back to previous page
Researcher
Cor Claeys
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 18 Nov 2007
Publications
411 - 420 of 455
- Radiation damages of GaAlAs LEDs by 70-MeV proton and 2-MeV electron irradiation(2008)
Authors: Cor Claeys
Pages: 171 - 173 - Schottky to ohmic transition in Pd/Ge contacts on n-GaAs(2008)
Authors: Andrea Firrincieli, Cor Claeys
Pages: 464 - 467 - Temperature influence on the gate-induced floating body effect parameters in fully depleted SOI nMOSFETs(2008)
Authors: Cor Claeys
Pages: 1751 - 1754 - Modeling the gate current 1/f noise and its application to advanced CMOS devices(2008)
Authors: Cor Claeys
Pages: 420 - 423 - Degradation of SiC-MESFETs by irradiation(2008)
Authors: Cor Claeys
Pages: 175 - 178 - Extended defects created by light ion implantation in Germanium(2008)
Authors: Cor Claeys
Pages: 163 - 175 - A model for MOS gate stack quality evaluation based on the gate current 1/f noise(2008)
Authors: Cor Claeys
Pages: 141 - 144 - Study on radiation damages of SiGe devices by irradiation(2008)
Authors: Mireia Bargallo Gonzalez, Cor Claeys
Pages: 63 - 65 - Factors influencing the leakage current in embedded SiGe source/drain junctions(2008)
Authors: Mireia Bargallo Gonzalez, Cor Claeys
Pages: 925 - 930 - Impact strain engineering on gate stack quality and reliability(2008)
Authors: Cor Claeys, Sofie Put
Pages: 1115 - 1126