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Researcher
Cor Claeys
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → 30 Sep 2020 - Associated Section of ESAT - INSYS, Integrated Systems (Division)
Member
From19 Nov 2007 → 31 Jul 2020 - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 1999 → 18 Nov 2007
Publications
431 - 440 of 455
- Microdose and breakdown effects induced by heavy ions on sub 20-nm triple gate SOI FETs(2008)
Authors: Sofie Put, Cor Claeys
Pages: 3182 - 3188 - Study of metal-related deep-level defects in germanide Schottky barriers on n-type germanium(2008)
Authors: Cor Claeys, Karen Maex
- Gate oxide thickness influence on the gate induced floating body effect in SOI technology(2008)
Authors: Paula GD Agopian, JM Martino, Eddy Simoen, Cor Claeys
Pages: 91 - 95 - Low-frequency noise in nFinFETs of different dimensions processed in strained and non-strained SOI wafers(2008)
Authors: Cor Claeys
Pages: 203 - 208 - Influence of fin width on the intrinsic voltage gain of standard and strained triple-gate nFinFETs(2008)
Authors: Cor Claeys
Pages: 253 - 261 - Influence of the highly-doped drain implantation and the window size on defect creation in p/n Si1-xGex source/drain junctions(2008)
Authors: Mireia Bargallo Gonzalez, Cor Claeys
Pages: 95 - 100 - Electrical activity of dislocations and defects in strained Si and Ge based devices(2008)
Authors: Mireia Bargallo Gonzalez, Cor Claeys
Pages: 513 - 527 - Effect of grown-in defects on the structure of oxygen precipitates in Cz-Si crystals with different diameter(2008)
Authors: Cor Claeys
Pages: 405 - 412 - Metal in-diffusion during Fe and Co-germanidation of germanium(2008)
Authors: Cor Claeys, Karen Maex
Pages: 47 - 52 - Electrostatic discharge effects in fully depleted SOI MOSFETs with ultra-thin gate oxide and different strain-inducing techniques(2008)
Authors: Cor Claeys
Pages: 59 - 66