Dual stack SOT. Interuniversitair Micro-Electronica Centrum vzw
A material layer stack, a non-volatile memory device comprising the stack, and arrays thereof are described. The material layer stack (11; 21; 31) comprises a first and a second magnetic tunnel junction (14, 15) and a first top electrode (13a) formed on a top face (17b) of the stack. A shoulder (18a) is formed on a lateral face of the stack and divides the stack into a lower portion and an upper portion, wherein a tunnel barrier (14b) of the first magnetic tunnel junction is comprised by the lower stack portion and a tunnel barrier (15b) of the second magnetic tunnel junction by the upper ...