The invention is related to a method for bonding and interconnecting two semiconductor chips arranged on semiconductor substrates (2a,2b). HSQ (Hydrogen Silsesquioxane) or an equivalent material is used as a bonding layer and after bonding and thinning one of the wafers (or first thinning and then bonding), the bond layer (7) is locally irradiated by an e-beam through the thinned substrate (2a), thereby locally transforming the bonding material into silicon oxide. Then a via opening (12) is etched through the thinned substrate and an etch process selectively removes the oxide from an area ...