TiO2/HfO2 bi-layer gate stacks grown by atomic layer deposition for germanium-based metal-oxide-semiconductor devices using GeOxNy passivation layer KU Leuven Universiteit Gent
Material and electrical properties of TiO2/HfO2 bi-layer gate stacks were investigated for germanium (Ge) based metal-oxide-semiconductor devices. In situ NH3 plasma treatment was employed to passivate the Ge surface and promising performance including low capacitance-voltage hysteresis and interface trap density was achieved. It shows a superior dielectric breakdown voltage (4.2-3.4 V) for the TiO 2/HfO2 bi-layer stacks than HfO2 single layer ...