Method for forming source/drain contacts. Interuniversitair Micro-Electronica Centrum vzw
In a first aspect, the present invention relates to a method for forming a source contact and a drain contact (700) in a semiconductor structure, comprising: ? masking a source region (221s) and a drain region (221d), ? replacing an unmasked sacrificial material (440) with a dielectric layer (450), ? removing the masking structure (550; 520m, 510m), ? selectively removing, by a wet etching, the sacrificial material (440) above the source and/or drain region (221) with respect to the dielectric layer (450), to such an extent as to expose the top surface of the source and/or drain region (221), ...