Layered structure of a p-tfet KU Leuven
A p-type Tunnel Field-Effect Transistor (p-TFET) comprises a drain p-type semiconductor region (101), a source n-type semiconductor region (103, 503), and at least one gate stack (104, 504). The source n-type semiconductor region (103, 503, 603) comprises a lowly doped section (109, 509, 609) with a length of at least 10 nm and with a doping level of n-type dopant elements below 5×10 18 at/cm 3 and, in contact with the lowly doped section, a highly doped section (111, 511) with a length between 1 monolayer and 20 nm and with a doping level of n-type dopant elements above 5×10 18 at/cm 3 .