Performances under saturation operation of p-channel FinFETs on SOI substrates at cryogenic temperature

© 2014 IEEE. The impact of cryogenic temperature operation on the short channel effects and analog performances was analysed on strained and unstrained p-channel SOI FinFETs. The main electrical parameters extracted from the saturation mode of operation are investigated and compared to those found at room temperature. Low frequency noise measurements at 10 K operation show that the carrier number fluctuations dominate the flicker noise in moderate inversion, while the access resistance noise contributions prevail in strong inversion.

ISBN:978-1-4799-3917-6

Jaar van publicatie:2014

BOF-keylabel:ja

IOF-keylabel:ja

Authors from:Government, Higher Education