Opgedampte metaal-organische kaders als hoogwaardige hiaten opvullende diëlektrica voor nano-elektronica (LO-KMOF)

Since the invention of integrated circuits, there has been a persistent incentive towards miniaturization. An indispensable part of every chip is a multi-level wiring system fabricated on top of the semiconductor layer containing the transistors. As transistors get smaller and more densely packed, the complexity and the impact on performance of the on-chip interconnects rises. The non-zero resistance and capacitance associated with the metal wires and the dielectric medium between them induce cross-talk noise between adjacent interconnects, limit the speed of signal propagation and increase the power consumption of a chip.

The LO-KMOF project proposes an approach to alleviate these issues by integrating for the first time metal-organic frameworks as an interconnect dielectric. The project will make use of a novel vapour phase deposition approach for these materials, developed in the ERC project VAPORE. If successful, the project will contribute to chips that are not only faster but also consume less power. The proposed technology will be validated in an industrially relevant demonstrator.