Publications
Atomic layer deposition of ultra-thin oxide semiconductors : challenges and opportunities Ghent University
A modelling approach on the impact of an oxide layer on the hydrogen permeation through iron membranes in the Devanathan-Stachurski cell Vrije Universiteit Brussel
The diffusion and trapping of hydrogen in iron alloys is commonly studied using the Devanathan-Stachurski cell. In this cell, the hydrogen flux through a metal membrane is studied. At the exit side of the membrane, an oxide layer is commonly developed and stabilized as a consequence of the anodic polarization imposed. The process of hydrogen diffusion through the oxide layer and its consecutive oxidation is not fully understood yet. In this ...
Thermal and plasma-enhanced atomic layer deposition of yttrium oxide films and the properties of water wettability Ghent University
EIS comparative study and critical Equivalent Electrical Circuit (EEC) analysis of the native oxide layer of additive manufactured and wrought 316L stainless steel Vrije Universiteit Brussel
In this work, a comparative electrochemical impedance spectroscopy (EIS) study of the native oxide layer of selective laser melted and wrought 316L stainless steel is conducted. A careful examination of the data is carried out in order to properly identify the appropriate model to fit the EIS response. From the parameters calculated by fitting the EIS data and a complementary XPS analysis, the electrical and dielectric characteristics of the ...