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Researcher
Annelies Delabie
- Disciplines:Physical chemistry, Theoretical and computational chemistry, Other chemical sciences, Biochemistry and metabolism, Medical biochemistry and metabolism, Atmospheric sciences
Affiliations
- Quantum Chemistry and Physical Chemistry (Division)
Member
From1 Oct 2012 → Today
Projects
1 - 10 of 19
- Ferroelectric memories: multi-layers stacks with tailored physical and electric properties by atomic layer depositionFrom20 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic-scale bottom-up fabrication: Area-Selective Deposition (ASD) of Si-based dielectrics and its application in IC manufacturingFrom15 Oct 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Interface study of ferroelectric/oxide semiconductor stacks and devicesFrom20 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Area-selective deposition mechanisms when pattern dimensions reach the nanoscaleFrom11 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Atomic layer deposition of two-dimensional transition metal dichalcogenides and ovonic threshold switching materials: A new computational framework for precursor designFrom1 Oct 2022 → TodayFunding: FWO Strategic Basic Research Grant
- Alternative semiconducting oxides for future DRAM applicationsFrom25 May 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Creating dielectric layers on two-dimensional (2D) semiconductors: chemical and physical mechanismsFrom18 Jan 2022 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Mechanisms and Selectivity during Atomic Layer Deposition of Germanium Chalcogenides for Storage Class Memory ApplicationsFrom1 Oct 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Dielectric Nanosheets for Scaled Two-Dimensional (2D) Material DevicesFrom22 Jan 2021 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Towards graphoepitaxy of semiconducting 2D single crystals on dielectric substrate patterns for next generation nanoelectronic devicesFrom5 Jan 2021 → TodayFunding: FWO Strategic Basic Research Grant
Publications
1 - 10 of 180
- Selectivity and Growth Rate Modulations for Ruthenium Area-selective Deposition by Co-Reagent and Nanopattern Design(2024)
Authors: Niels Claessens, Annelies Delabie
- Chemical Vapor Deposition of a Single-Crystalline MoS2 Monolayer through Anisotropic 2D Crystal Growth on Stepped Sapphire Surface(2024)
Authors: Serkan Koylan, Annelies Delabie
Pages: 3173 - 3186 - Future generation Photomasks for Advanced Lithography(2023)
Authors: Devesh Ratnakar Thakare, Annelies Delabie
- Ru/Ta bilayer approach to EUV mask absorbers: Experimental patterning and simulated imaging perspective(2023)
Authors: Devesh Ratnakar Thakare, Annelies Delabie
- 300 mm-wafer metrology for area-selective deposition in nanoscale patterns: A case study for ruthenium atomic layer deposition(2023)
Authors: Annelies Delabie
- Quantified Uniformity and Selectivity of TiO2 Films in 45-nm Half Pitch Patterns Using Area-Selective Deposition Supercycles(2023)
Authors: Annelies Delabie
- Probing the spatial dimensions of nanoscale patterns with Rutherford backscattering spectrometry(2023)
Authors: Niels Claessens, Annelies Delabie, André Vantomme, Wilfried Vandervorst, Johan Meersschaut
Pages: 174 - 181 - Optimizing extreme ultraviolet lithography imaging metrics as a function of absorber thickness and illumination source: a simulation case study of Ta-Co alloy(2023)
Authors: Annelies Delabie
- A First-Principles Investigation of the Driving Forces Defining the Selectivity of TiO2 Atomic Layer Deposition(2023)
Authors: Annelies Delabie
Pages: 10303 - 10314 - Aminosilane small molecule inhibitors for area-selective deposition: Study of substrate-inhibitor interfacial interactions(2023)
Authors: Jan-Willem Clerix, Annelies Delabie
Patents
1 - 10 of 10
- Method of manufacturing a semiconductor structure (Inventor)
- Method of manufacturing a semiconductor structure (Inventor)
- A method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- A method for forming a silicide gate for a semiconductor device (Inventor)
- Method of producing transition metal dichalcogenide layer (Inventor)
- Method for forming a vertical hetero-stack and a device including a vertical hetero-stack (Inventor)
- Method of forming a feature of a target material on a substrate (Inventor)
- METHOD OF PRODUCING TRANSITION METAL DICHALCOGENIDE LAYER (Inventor)
- Method for selectively depositing noble metals on metal/metal nitride substrates (Inventor)
- Oxygen monolayer on a semiconductor (Inventor)