Researcher
Anne Verhulst
- Disciplines:Nanotechnology, Design theories and methods
Affiliations
- Assiocated Division ESAT-INSYS (INSYS), Integrated Systems (Division)
Member
From1 Aug 2020 → Today - Electronic Circuits and Systems (ECS) (Division)
Member
From1 Aug 2020 → 30 Apr 2010 - Electrical Energy Systems and Applications (ELECTA) (Division)
Member
From1 Aug 2020 → 31 Dec 2007 - ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Oct 2008 → 30 Apr 2010
Projects
1 - 5 of 5
- Enabling 3D scanning probe microscopy for nanoelectronics device analysis and TCAD calibration of advanced technology nodesFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- The demonstration of next DRAM with 3D structure using novel channel materialFrom13 Sep 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Calibration of TCAD process simulators towards N2 with advanced 2D/3D metrology solutions including SPM-based SSRM techniqueFrom22 Jun 2023 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of hybrid nanofluidic-nanoelectronic devices for single-molecule biosensingFrom26 Aug 2021 → 22 Apr 2022Funding: Own budget, for example: patrimony, inscription fees, gifts
- Modeling of the tunnel field-effect transistor.From19 Oct 2009 → 30 Apr 2010Funding: BOF - Other initiatives
Publications
81 - 90 of 101
- Modeling the single-gate, double-gate and gate-all-around tunnel field-effect transistor(2010)
Authors: Anne Verhulst, Daniele Leonelli, William Vandenberghe, Guido Groeseneken
- Advancing CMOS beyond the Si roadmap with Ge and III/V devices(2010)
Authors: Marc Heyns, Ali Reza Alian, Federica Gencarelli, Guido Groeseneken, Geert Hellings, Michel Houssa, Daniele Leonelli, Han Chung Lin, Clement Merckling, Anne Verhulst, et al.
Number of pages: 4 - High mobility channel materials and novel devices for scaling of nanoelectronics beyond the Si roadmap(2009)
Authors: Marc Heyns, Stefan De Gendt, Annelies Delabie, Geert Eneman, Guido Groeseneken, Michel Houssa, Daniele Leonelli, Koen Martens, Clement Merckling, William Vandenberghe, et al.
Pages: 34 - 45 - Tunnel field-effect transistors for future low-power nano-electronics(2009)
Authors: Anne Verhulst, William Vandenberghe, Daniele Leonelli, Stefan De Gendt, Marc Heyns, Guido Groeseneken
Pages: 455 - 462 - Complementary Silicon-Based Heterostructure Tunnel-FETs With High Tunnel Rates(2008)
Authors: Anne Verhulst, William Vandenberghe, Karen Maex, Stefan De Gendt, Marc Heyns, Guido Groeseneken
Pages: 1398 - 1401 - Boosting the on-current of a n-channel nanowire tunnel field-effect transistor by source material optimization(2008)
Authors: Anne Verhulst, William Vandenberghe, Karen Maex, Guido Groeseneken
- Boosting the on-current of silicon nanowire tunnel-FETs(2008)
Authors: Anne Verhulst, William Vandenberghe, Stefan De Gendt, Karen Maex, Guido Groeseneken
Pages: 143 - +Number of pages: 2 - Growth and integration of high-density CNT for BEOL interconnects(2008)
Authors: Anne Verhulst, Nicolo' Chiodarelli, Guido Groeseneken, Marc Heyns, Stefan De Gendt, Philippe Vereecken
Pages: 150 - 155 - Analytical model for a tunnel field-effect transistor(2008)
Authors: William Vandenberghe, Anne Verhulst, Guido Groeseneken
Pages: 902 - 907 - Analytical model for point and line tunneling in a tunnel field-effect transistor(2008)
Authors: William Vandenberghe, Anne Verhulst, Guido Groeseneken
Pages: 137 - 140
Patents
1 - 10 of 10
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)
- Layered structure of a p-tfet (Inventor)
- Layered structure of a p-tfet (Inventor)
- Drain extension region for tunnel fet (Inventor)
- Tunnel field-effect transistors based on silicon nanowires (Inventor)
- Drain extension region for tunnel fet (Inventor)
- A tunnel field-effect transistor with gated tunnel barrier (Inventor)
- Tunnel field effect transistor and method for making thereof (Inventor)
- Tunnel field effect transistor device and method for making the device (Inventor)