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Researcher
Janaki Radhakrishnan
- Disciplines:Condensed matter physics and nanophysics
Affiliations
- Semiconductor Physics (Division)
Member
From1 Feb 2016 → 30 Sep 2020
Publications
1 - 6 of 6
- Effect of the switching layer on CBRAM reliability and benchmarking against OxRAM devices(2021)
Authors: Janaki Radhakrishnan
- Investigation of electrical properties of leading-edge scaled CBRAM devices using novel materials for future memory technologies(2020)
Authors: Janaki Radhakrishnan, Michel Houssa
- Impacts of Ta Buffer Layer and Cu-Ge-Te Composition on the Reliability of GeSe-Based CBRAM(2019)
Authors: Janaki Radhakrishnan, Michel Houssa
Pages: 5133 - 5138 - Improving Post-Cycling Low Resistance State Retention in Resistive RAM With Combined Oxygen Vacancy and Copper Filament(2019)
Authors: Janaki Radhakrishnan, Michel Houssa
Pages: 1072 - 1075 - Key material parameters driving CBRAM device performances(2019)
Authors: Janaki Radhakrishnan, Michel Houssa
Pages: 67 - 85 - On the key impact of composition of Ge-Te and Ge-Se electrolytes on CBRAM properties(2018)
Authors: Janaki Radhakrishnan, Michel Houssa
Pages: 102 - 105Number of pages: 4