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Publication
Improving Post-Cycling Low Resistance State Retention in Resistive RAM With Combined Oxygen Vacancy and Copper Filament
Journal Contribution - Journal Article
Journal: IEEE Electron Device Letters
ISSN: 0741-3106
Issue: 7
Volume: 40
Pages: 1072 - 1075
Publication year:2019
BOF-keylabel:yes
IOF-keylabel:yes
BOF-publication weight:1
CSS-citation score:1
Authors from:Government, Higher Education
Accessibility:Open