Aluminium Oxide as Negatively Charged Surface Passivation for Industrial Crystalline Silicon Solar Cells KU Leuven
ESAT - ELECTA, Electrical Energy and Computer Architectures, Associated Section of ESAT - INSYS, Integrated Systems
In this study, thermal atomic layer deposition (ALD) of Al2O3 is (1) first characterized as surface passivation layer for p-type CZ Si and (2) accordingly implemented into industrial large-area passivated emitter and rear cell (PERC) p-type Si solar cells. (1) The characterization part is focused on relevant topics for Si solar cell processing: the development of an adequate pre-passivation wafer clean and an in depth study of the impact of ...