A method for depositing a transition metal dichalcogenide. Interuniversity Microelectronics Centre
The disclosure relates to a method for depositing a transition metal dichalcogenide, the method comprising: depositing a layer of the transition metal dichalcogenide on a substrate by a metalorganic chemical vapor deposition process comprising exposing the substrate to a mixture of reactant gases comprising a transition metal precursor and a chalcogen precursor, wherein the mixture further comprises a gas-phase halogen-based reactant to volatilize transition metal adatoms deposited on the substrate.