Analysis of a narrow-base lateral IGBT with double buried layer for junction-isolated smart-power technologies Ghent University
An n-type lateral insulated gate bipolar transistor (nLIGBT) with a double buried layer structure is studied. This device is integrated in an existing smart-power junction-isolated technology with a 0.35-mu m CMOS core without adding extra mask steps. The double buried layer underneath the active nLIGBT not only renders this a floating device (i.e., it can be used as a high-side switch) but also suppresses the substrate current effectively, and, ...