Researcher
Guido Groeseneken
- Keywords:Electronics and electrical engineering
- Disciplines:Modelling, Multimedia processing, Sensors, biosensors and smart sensors, Other electrical and electronic engineering, Other engineering and technology
Affiliations
- ESAT - MICAS, Microelectronics and Sensors (Division)
Member
From1 Jan 2008 → Today - Department of Electrical Engineering (ESAT) (Department)
Member
From1 Oct 2001 → 30 Sep 2007
Projects
1 - 10 of 26 results
- Fundamental and practical aspects of gate oxide breakdown in VLSI technologies beyond 7nmFrom4 Dec 2019 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Selector for high-density memoryFrom23 Oct 2019 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Physical modelling and optimization of ferroelectric FETs for memory applications.From10 May 2019 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Characterization and modelling of superconducting qubitsFrom31 Jan 2019 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- ESD Protection Design for RF & mm-Wave Circuits in CMOS TechnologiesFrom4 Sep 2018 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Development of reliable gate stacks for stacked MOS devices in a 3D sequential integrationFrom26 Sep 2017 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Unified Physics-Based Model of Degradation of FinFETs and Nanowire FETs for beyond 7 nm TechnologiesFrom21 Sep 2017 → TodayFunding: FWO fellowships
- Modelling, exploration and technology assessment of steep-subthreshold-slope transistors for N5/N3 CMOS power-performance scalingFrom31 Mar 2017 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Electrical characterization of GaN buffers on novel substratesFrom24 Feb 2017 → TodayFunding: Own budget, for example: patrimony, inscription fees, gifts
- Feasibility of nanowire tunnel-FETs using dopant atoms for future ultra-low power CMOS-applications.From1 Oct 2016 → TodayFunding: FWO Strategic Basic Research Grant
Publications
1 - 10 of 513 results
- Observation of Dynamic V-TH of p-GaN Gate HEMTs by Fast Sweeping Characterization(2020)Journal: IEEE Electron Device LettersISSN: 0741-3106Issue: 4Volume: 41
Authors: Xiangdong Li, Benoit Bakeroot, Zhicheng Wu, Nooshin Amirifar, Shuzhen You, Niels Posthuma, Ming Zhao, Hu Liang, Guido Groeseneken, Stefaan Decoutere
Pages: 577 - 580Number of pages: 4 - MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts(2019)Journal: Advanced Functional MaterialsISSN: 1616-301XIssue: 4Volume: 30
Authors: Yashwanth Balaji, Quentin Smets, Aron Szabo, Marco Mascaro, Dennis Lin, Inge Asselberghs, Iuliana Radu, Mathieu Luisier, Guido Groeseneken
Number of pages: 10 - Large Variation in Temperature Dependence of Band-to-Band Tunneling Current in Tunnel Devices(2019)Journal: IEEE Electron Device LettersISSN: 0741-3106Issue: 11Volume: 40
Authors: Jasper Bizindavyi, AS Verhulst, D Verreck, B Soree, Guido Groeseneken
Pages: 1864 - 1867Number of pages: 4 - Ferroelectric Control of Magnetism in Ultrathin HfO2\Co\Pt Layers(2019)Journal: ACS Applied Materials and InterfacesISSN: 1944-8244Issue: 37Volume: 11
Authors: Bart Vermeulen, Florin Ciubotaru, Mihaela I Popovici, Johan Swerts, Sebastien Couet, Iuliana P Radu, Alexandru Stancu, Kristiaan Temst, Guido Groeseneken, Christoph Adelmann, et al.
Pages: 34385 - 34393Number of pages: 9 - Demonstration of GaN Integrated Half-Bridge With On-Chip Drivers on 200-mm Engineered Substrates(2019)Journal: IEEE Electron Device LettersISSN: 0741-3106Issue: 9Volume: 40
Authors: Xiangdong Li, Karen Geens, Weiming Guo, Shuzhen You, Ming Zhao, Dirk Fahle, Vladimir Odnoblyudov, Guido Groeseneken, Stefaan Decoutere
Pages: 1499 - 1502Number of pages: 4 - Process-Induced Power-Performance Variability in Sub-5nm III-V Tunnel FETs(2019)Journal: IEEE Transactions on Electron DevicesISSN: 0018-9383Issue: 6Volume: 66
Authors: Yang Xiang, Anne Verhulst, Dmitry Yakimets, Bertrand Parvais, Anda Mocuta, Guido Groeseneken
Pages: 2802 - 2808 - On the Impact of the Gate Work-Function Metal on the Charge Trapping Component of NBTI and PBTI(2019)Journal: IEEE Transactions on Device and Materials ReliabilityISSN: 1530-4388Issue: 2Volume: 19
Authors: J Franco, Zhicheng Wu, G Rzepa, L-A Ragnarsson, H Dekkers, A Vandooren, Guido Groeseneken, N Horiguchi, N Collaert, D Linten, et al.
Pages: 268 - 274Number of pages: 7 - Improved PBTI Reliability in Junction-Less FET Fabricated at Low Thermal Budget for 3-D Sequential Integration(2019)Journal: IEEE Transactions on Device and Materials ReliabilityISSN: 1530-4388Issue: 2Volume: 19
Authors: Zhicheng Wu, Jacopo Franco, Anne Vandooren, Ben Kaczer, Philippe Roussel, Gerhard Rzepa, Tibor Grasser, Dimitri Linten, Guido Groeseneken
Pages: 262 - 267Number of pages: 6 - Phonon-assisted tunneling in direct-bandgap semiconductors(2019)Journal: Journal of Applied PhysicsISSN: 0021-8979Issue: 1Volume: 125
Authors: Mazharuddin Mohammed, Anne S Verhulst, Devin Verreck, Maarten L Van de Put, Wim Magnus, Bart Sorée, Guido Groeseneken
Number of pages: 10 - Buffer Vertical Leakage Mechanism and Reliability of 200-mm GaN-on-SOI(2019)Journal: IEEE Transactions on Electron DevicesISSN: 0018-9383Issue: 1Volume: 66
Authors: Xiangdong Li, Ming Zhao, Benoit Bakeroot, Karen Geens, Weiming Guo, Shuzhen You, Steve Stoffels, Vesa-Pekka Lempinen, Jaakko Sormunen, Guido Groeseneken, et al.
Pages: 553 - 560Number of pages: 8